Title:
BIDIRECTIONAL WAVELENGTH CONVERSION ELEMENT
Document Type and Number:
Japanese Patent JPS59977
Kind Code:
A
Abstract:
PURPOSE:To enable to efficiently convert wavelengths between two difference wavelengths by a bidirectional wavelength conversion element by composing of p-n-p (or n-p-n) type transistor structure of direct transient semiconductor material. CONSTITUTION:A bidirectional wavelength conversion element is composed in a p-n-p type transistor of a p type Ga1-xAlxAs layer 1, an n type Ga1-yAlyAs layer 2 and a p type Ga1-zAlzAs layer 3. An external bias voltage V is applied between the electrodes 4 and 5 so that a reverse bias is applied between the layers 1 and 2 and a forward bias is applied between the layers 2 and 3. The incident light of wavelength lambda1 is introduced to the layer 1 of a band gap Eg1, thereby generating photons. The generated photons are flowed to the layer 2 by a reverse bias electric field applied between the layes 1 and 2. The flowed electrons are injected to the layer 3, and light is emitted to be recombined in this region.
Inventors:
OKUDA HIROSHI
Application Number:
JP10954982A
Publication Date:
January 06, 1984
Filing Date:
June 25, 1982
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
G02F2/00; G02F1/015; G02F2/02; H01L31/12; H01L31/14; H01L31/153; (IPC1-7): G02F1/015; G02F2/02; H01L31/14
Attorney, Agent or Firm:
Kyozo Yuasa