Title:
MANUFACTURE FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5982732
Kind Code:
A
Abstract:
PURPOSE:To obtain an excellent depositing film, which can be applied to an inter-layer insulating film of a multilayer wiring and a passivation film in a high-density RAM VLSI, etc., by irradiating carbonic acid gas laser beams and the beams of a low-pressure mercury-arc lamp and forming a silicon oxide film. CONSTITUTION:Substrates 103 are fitted to an aluminum pedestal 104, a valve 105 is closed, and the inside of a cell is evacuated sufficiently while the substrates 103 are heated at a set temperature by an infrared ray heater 106. When the valve 105 is opened, a gas in which N2O gas and SiH4 gas are mixed at the rate of 1/10 is introduced and the gas is stabilized in a steady flow at 22 Torr, beams are irradiated by the low-pressure mercury-arc lamp 101 and a carbonic acid gas laser light source 102 to form the film. The carbonic acid gas laser beams are irradiated in parallel on the substrates. The speed of deposition can be increased to the rate of several hundred Angstrom /min by using such a photochemical vapor growth method, and stoichiometry can be controlled, thus forming the excellent depositing silicon oxide film of superior density, which can be applied to the inter-layer film and passivation film of the VLSI such as the high-density RAM.
Inventors:
NUMAZAWA YOUICHIROU
Application Number:
JP19321082A
Publication Date:
May 12, 1984
Filing Date:
November 02, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C23C16/40; C23C16/48; H01L21/316; (IPC1-7): H01L21/26
Attorney, Agent or Firm:
Uchihara Shin