Title:
SEMICONDUCTOR HEAT-TREATMENT APPARATUS
Document Type and Number:
Japanese Patent JPS5999714
Kind Code:
A
Abstract:
PURPOSE:To make it possible to obtain a semiconductor crystal thin film of high quality by a heat treatment requiring only a short period time, by a method wherein, with a pair of linear heaters employed, a portion of a sample is selectively heated from both the upper and lower surfaces thereof, and the portion to be heated is shifted. CONSTITUTION:Over both the upper and lower surfaces of a sample 11, linear heaters 14, 15, which are longer than the sample 11 are respectively disposed in close proximity thereto. These heaters 14, 15 are disposed in parallel to each other with the sample 11 interposed therebetween. The heaters 14, 15 are adapted to move in one unit in the longitudinal direction thereof and in the direction perpendicular to the opposing direction thereof. With this arrangement, the polycrystalline Si thin film of the sample 11 can be transformed into a single cyrstal thin film of excellent quality by scanning across the sample 11 with the heaters 14, 15. In this case, it is possible to extremely reduce the period of time that any desired region of the sample 11 is heated. Thus, this arrangement is made extremely effective in formation of a semiconductor crystal thin film of high quality.
More Like This:
Inventors:
YOSHII TOSHIO
Application Number:
JP20864082A
Publication Date:
June 08, 1984
Filing Date:
November 30, 1982
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
H01L21/20; (IPC1-7): H01L21/324
Previous Patent: A system and a method for closing an incision
Next Patent: HEATING APPARATUS FOR SAMPLE IN VACUUM
Next Patent: HEATING APPARATUS FOR SAMPLE IN VACUUM