Title:
MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS607715
Kind Code:
A
Abstract:
PURPOSE:To contrive to enhance uniformity and reproducibility of impurity concentration distribution in the surface of a substrate at manufacture of a compound semiconductor device by a method wherein an ion implanted layer is activated according to heat treatment by forming a condition not to generate vapor phase growth and vapor phase etching on a compound semiconductor substrate. CONSTITUTION:At a Ga/AsCl3/H2 vapor phase growth device, by setting the temperature of a Ga source 13 and an impurity ions Si<+> implanted GaAs substrate 14 at nearly the same, a condition not to generate vapor phase growth and vapor phase etching appears on the substrate 14. Heat treatment of the substrate 14 is performed utilizing the condition thereof to perform activation of an impurity implanted layer. The implanted layer in the substrate 14 can be heat- treated at 800-850 deg.C of the temperature and at about 1X10<-3> of As partial pressure by using the method thereof. Reduction is not generated to the electric activation ratio of impurities implanted in such a way, and uniformity and reproducibility of concentration distribution in the surface of the substrate are enhanced sharply.
Inventors:
ARAI KENICHI
Application Number:
JP11554383A
Publication Date:
January 16, 1985
Filing Date:
June 27, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/812; H01L21/18; H01L21/265; H01L21/338; (IPC1-7): H01L21/18; H01L21/265; H01L29/80
Attorney, Agent or Firm:
Uchihara Shin
Next Patent: JPS607716