Title:
VAPOR PHASE GROWTH PROCESS
Document Type and Number:
Japanese Patent JPS6131395
Kind Code:
A
Abstract:
PURPOSE:To improve steep characteristic of a compsn. at an interface in a multilayered laminating growth process by providing a gas unintroducing zone by separating a space into plural zones for the stream of gas introduced into a reaction tube, and moving a substrate to each zone. CONSTITUTION:Inside of a reaction tube 1 is separated by partition plates 13 to plural space zoned 14, 15, 16. Gaseous hydorgen alone, growing gas for GaAs crystal, and growing gas for growing GaAlAs is sent to each zone 14-16 separately through feeding pipe 18, 19, 20. The substrate 7 is revolved around a supporting shaft 9 against the above-described gas stream. When the substrate 7 comes to a downstream position of the zone 15, this GaAs film is grown, and when the substrate 7 comes to the downstream side of the zone 16, a GaAlAs thin film is grown. Further, reactant gas for growing GaAlAs remaining near the thin film of GaAlAs is swept off by holding the substrate 7 at the downstream side of the zone 14. If the substrate 7 is held at the downstream side of the zone 15 thereafter, a GaAs thin film can be formed on a GaAlAs thin film with steep condition of the compsn. of the interlayer face.
Inventors:
OGURA MOTOTSUGU
BAN YUZABURO
MORIZAKI MOTOJI
HASE NOBUYASU
BAN YUZABURO
MORIZAKI MOTOJI
HASE NOBUYASU
Application Number:
JP15435484A
Publication Date:
February 13, 1986
Filing Date:
July 25, 1984
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C30B25/12; C30B25/02; H01L21/205; (IPC1-7): C30B25/02; H01L21/205
Attorney, Agent or Firm:
Akira Kobiji (2 outside)
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