Title:
PREPARATION OF COMPOUND SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS5973500
Kind Code:
A
Abstract:
PURPOSE:To prepare a high-purity compound semiconductor, easily, and to facilitate the operation for the preparation of a single crystal, by placing the constituent elements of a III-V semiconductor separately in a sealed tube, and carrying out the vapor-phase growth of the polycrystalline semiconductor to the inner surface of the reaction vessel. CONSTITUTION:For example, in the preparation of InP polycrystal, the quartz ampule 16 is placed in an electrical furnace giving a temperature necessary for the synthesis of InP and a temperature necessary for the supply of In vapor and P4 vapor. The P4 vapor generated from the red phosphorus 11 heated with the electrical furnace is made to react with the In vapor generated from the molten In 12 in the InP-synthesis reaction zone 17, and polycrystalline InP 15 utilizable for the preparation of a single crystal as it is, is deposited on the inner surface of the crucible 14. The left-hand end of the tapered part of the ampule 16 is cut by welding, the crucible 14 is taken out of the ampule, and an InP single crystal is prepared from the obtained polycrystalline InP 15 e.g. by liquid encapsulated pulling method.
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Inventors:
KAMATA HIDEHIKO
SHINOYAMA SEIJI
KATSUI AKINORI
SHINOYAMA SEIJI
KATSUI AKINORI
Application Number:
JP18214182A
Publication Date:
April 25, 1984
Filing Date:
October 19, 1982
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
C01G30/00; C01B25/08; C30B15/00; C30B29/40; H01L21/205; (IPC1-7): C01B25/08; C01G28/00; C01G30/00; C30B29/40; H01L21/02; H01L21/20
Attorney, Agent or Firm:
Tsuneo Shiramizu
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