Title:
PREPARATION OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS5833838
Kind Code:
A
Abstract:
PURPOSE:To prevent undesired reflection to conductive pattern by forming the conductive layer surface on the irregular reflection surface. CONSTITUTION:In the case of forming a conductive layer by the chemical vapor depositin method, the pressure within the hermetically sealed vessel 6 is drawn until it is set in the vacuum condition. Under this condition, the semiconductor substrate 7 is placed at the upper portion with the evaporation surface faced downward, while the evaporation source 10, for example, the aluminium is placed in the lower portion. Then, these are heated. The conductive layer thus evaporated by such process is subjected to the plasma etching after the ion bombardment under the argon gas pressure reduced condition by inserting the shutter 11 between the evaporation source and semiconductor or substrate. The plasma etching condition should be predetermined experimentally because what is required is only that the surface of conductive layer becomes rough.
Inventors:
NAGAHIRO YUUICHI
Application Number:
JP13212581A
Publication Date:
February 28, 1983
Filing Date:
August 25, 1981
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/027; H01L21/30; (IPC1-7): H01L21/30
Attorney, Agent or Firm:
Inoue Kazuo