Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5843520
Kind Code:
A
Abstract:
PURPOSE:To prevent the lowering of yield rate due to exfoliation of photoresist by a method wherein, in the extreme vicinity of the element having the highest substrate surface, a dummy element of the height same as that of the said element or higher than that is provided. CONSTITUTION:The characteristic of this device is that dummy regions B and C of the same height as that of the required element A or higher than that are provided in the extreme vicinity of the element A. When a photomask 6 is forcedly adhered, pressure is applied uniformly or intensely on the regions B and C, and the exfoliation of the photoresist on the required region A can be prevented.
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Inventors:
TOKUYAMA KENJI
Application Number:
JP14189781A
Publication Date:
March 14, 1983
Filing Date:
September 09, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/027; H01L21/30; (IPC1-7): H01L21/30
Attorney, Agent or Firm:
Uchihara Shin