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Title:
CRUSHING METHOD OF SILICON FOR SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPS6033210
Kind Code:
A
Abstract:

PURPOSE: To crush rapidly without contamination by placing a rod-shaped polycrystal silicon in a microwave for a short time, and heating rapidly the rod- shaped polycrystal from inward by dielectric heating.

CONSTITUTION: The microwave is oscillated by an oscillator 1, and introduced into a directional coupler 2 through a waveguide. The microwave whose travelling wave M1 and reflected wave M2 are measured by the directional coupler 2 is introduced into an oven 6 through a matching device 3. Meanwhile, a rod- shaped polycrystal silicon 5 is inserted into the oven 6 from the upper part of the oven 6. The rod-shaped polycrystal silicon 5 is dielectrically heated rapidly from inward by the microwave, and the crushed silicon 10 is obtained. The crushed silicon 10 is dropped into a vessel 7 filled with demineralized water 8, washed, and then stored in a storage vessel 11 through a conveyor 9.


Inventors:
YATSURUGI YOSHIFUMI
KATAYAMA AKASHI
Application Number:
JP14058983A
Publication Date:
February 20, 1985
Filing Date:
August 02, 1983
Export Citation:
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Assignee:
KOMATSU DENSHI KINZOKU KK
International Classes:
B28D5/00; C01B33/02; C30B15/00; C30B29/06; (IPC1-7): C01B33/02; C30B15/00
Domestic Patent References:
JPS5237228A1977-03-23
JPS4724387A
Attorney, Agent or Firm:
Shigeru Yagita



 
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