Title:
METHOD AND APPARATUS FOR PREPARATION OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS6144796
Kind Code:
A
Abstract:
PURPOSE:To produce a long single crystal of a compound semiconductor by LEC process, suppressing the defect originated from the decomposition and the thermal stress at the surface of the single crystal, by pulling the single crystal while blasting specific argon gas toward the surface of the pulled single crystal. CONSTITUTION:A crucible 6 is placed in a water-cooled stainless steel chamber 11 containing a gas of several tens atmosphere. The compound single crystal 2 is pulled up from the molten raw material 4 in the crucible 6 by the aid of the pulling shaft 1 (the sign 3 is liquid encapsulant). In the above process, a gas effective to suppress the decomposition and dissipation of the component at the surface of the pulled single crystal is added to Ar gas, and the mixed gas is circulated by the blower 7, passed through the blowing gas guide 9 fitting freely to the pulling shaft 1, heated with the heater 10, and blasted to the surface of the pulled single crystal 2.
Inventors:
YASUDA SADAO
NAKAGAWA JUNKICHI
NAKAGAWA JUNKICHI
Application Number:
JP16720984A
Publication Date:
March 04, 1986
Filing Date:
August 09, 1984
Export Citation:
Assignee:
HITACHI CABLE
International Classes:
C30B27/02; C30B15/20; (IPC1-7): C30B15/20
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