PURPOSE: To form the film thickness of a photoconductive layer uniformly, to prevent a defect phenomenon such as dielectric breakdown with the change of the quality of the film and to improve yield by forming film thickness at the end section of a metallic electrode in thickness thinner than that at a central section.
CONSTITUTION: An upper corner section at an end section is removed and a metallic electrode 2 is formed on an insulating substrate 1, and a photoconductive layer 3 and a transparent electrode 4 are laminated. The film thickness (a) of the photoconductive layer 3 corresponding to the central section of the metallic electrode 2 and film thickness (b) corresponding to the end section are made approximately equal when the photoconductive layer 3 is applied, and the film thickness of the photoconductive layer 3 can be equalized extending over the whole surface. When amorphous silicon is used as the photoconductive layer, the change of the quality of the film due to an enfolding of a gas on vapor phase growth using the gas can be relaxed.
TAKENOUCHI MUTSUO
OZAWA TAKASHI
HAMANO TOSHIHISA
ITOU HISAO
FUSE MARIO
