Title:
DRY ETCHING METHOD
Document Type and Number:
Japanese Patent JPS59119727
Kind Code:
A
Abstract:
PURPOSE:To avoid the adhesion of dust onto the surface by etching a body to be etched while surrounding the body to be etched by a cover with a plurality of minute holes when the body to be etched disposed into a chamber is etched through sputtering etching, ion etching, reactive ion etching or the like. CONSTITUTION:The bodies to be etched 3 are fitted on an electrode 2 in the chamber, and the bodies to be etched are surrounded by the covers 7. A semiconductor substrate in which a polycrystalline Si film to which P is doped is deposited on a Si wafer through an oxide film, etc. are used as the body to be etched 3, and a desired resist pattern is formed on the surface of the substrate. The cover 7 is constituted by a susceptor 9 in Al2O3, SiO2 or the like on which a net body 8, an upper surface thereof is opened and which is made of stainless, etc., is stretched and a porous filter 10, which is fixed to the upper surface of the susceptor and which has a plurality of minute holes and consists of carbon, etc. Accordingly, predetermined etching is executed to the body to be etched 3, and a Si film is etched without generating side etching.
Inventors:
IWAI HIROSHI
ARIKADO TSUNETOSHI
ARIKADO TSUNETOSHI
Application Number:
JP23291382A
Publication Date:
July 11, 1984
Filing Date:
December 24, 1982
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L21/302; (IPC1-7): H01L21/302
Attorney, Agent or Firm:
Takehiko Suzue