PURPOSE: To increase dark resistance and to improve simultaneously the mechanical characteristics, heat resistance, and photosensitivity by forming a P type a-Si film doped with boron on an electroconductive substrate and laminating an a-SiC film doped with C thereon.
CONSTITUTION: A P type a-Si film 2 doped with boron is formed on an electroconductive substrate 1 and an a-SiC film 3 doped with C and an undoped a-Si film are further successively laminated thereon. For example, a photosensitive body may be formed by providing further a layer doped with C on said undoped a-Si film. By the lamination of a P type a-Si film 1 on an a-SiC film, similar effect on the PN junction of a semiconductor is obtd., reducing dark attenuation after stopping corona discharge, and a distinct picture image is formed due to elongation of half-potential level period. The mechanical strength, heat resistance, and photosensitivity are improved by doping the outermost layer with carbon, and the durability is also improved.
| JP4208452 | Image forming device |
| JPH0277753 | ELECTROPHOTOGRAPHIC SENSITIVE BODY |
| JPH0647732 | PROBLEM TO BE SOLVED: To form a sedimentary film |
SANO SEIJIROU
MATSUDA HIROSHI
