PURPOSE: To obtain the ohmic electrode having favorable adhesion and low contact resistance, and is suitable also for shallow junction by a method wherein a Ti layer, a Zn layer, a Ti layer, and an Ag layer are formed in order on a P type III-V group compound semiconductor layer.

CONSTITUTION: A P type AlGaAs layer 3 is formed according to liquid phase epitaxial growth on an N type GaAs substrate 1, and at this time, the P type GaAs layer 2 is formed. The P type layer 3 is etched selectively to expose the P type GaAs layer 2, the Ti layer 7a of 0.05∼0.1μm thickness, the Zn layer 7b of 0.01∼0.05μm thickness, the Ti layer 7c of 0.05∼0.1μm thickness, and the Ag layer 7d of 0.2μm thickness or more are stacked according to vacuum evaporation, and photo etching is performed to leave the evaporation layers 7a∼7d at the necessary part. Then the heat treatment is performed at 430∼470°C in inactive gas to complete the P side electrode 7. According to this construction, junction leakage is not generated completely even when junction is formed shallowly at about 0.3μm, and the ohmic contact electrode having tensile strength of 50kg or more, and having low resistance can be obtained.