PURPOSE: To form two strangulating layers minimizing threshold value current and making low voltage actuation feasible by a method wherein an InGaAsP/InP semiconductor laser device is produced by one time serial liquid epitaxial growth and the first current strangulating layer is provided between an active layer and substrate while the second current strangulating layer comprising a Zn diffused region is provided on the active layer.
CONSTITUTION: A semiconductor laser layer 3 comprising layers 4∼8 is formed on a P type InP substrate 1 by one time serial liquid epitaxial growth. At this time, the layer 4 provided on the surface 1a excluding a groove 2 provided on the central part of the substrate 1 are utilized as the first current strangulating layer and a ZnO film 11 with a window 11a corresponding to the groove is provided on the surface 8a of an N type InP second clad layer 8 on an active layer 7. Next the Zn in the film 11 may be solid-diffused in a lower clad layer 8 by heattreatment to utilize Zn diffused regions 12 as the second current strangulating layers located on the upper side of the active layer 7.
HORIKAWA HIDEAKI
SANO KAZUYA
FURUKAWA RIYOUZOU
