Title:
CHEMICAL COMPOSITION FOR PLASMA ETCHING FOR ANISOTROPIC ETC-HING OF SILICON
Document Type and Number:
Japanese Patent JPS5967635
Kind Code:
A
Abstract:
A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl3 has Br2 added to it, readily allowing anisotropic etching of silicon. This is due to the low volatility of SiBr4. The silicon surface facing the discharge is subjected to ion bombardment, allowing the volatilization (etching) of silicon as a Si-CI-Br compound. The Br which adsorbs on the sidewalls of the etched silicon protects them from the etching. This new plasma etch chemistry yields a very smooth etched surface, and the etch rate is relatively insensitive to the electrical conductivity of the silicon.
Inventors:
ANDORIYUU JIEI PAADESU
Application Number:
JP12225383A
Publication Date:
April 17, 1984
Filing Date:
July 05, 1983
Export Citation:
Assignee:
TEXAS INSTRUMENTS INC
International Classes:
C01B33/00; C01B33/02; C04B41/91; C23F4/00; H01L21/302; H01L21/3065; H01L21/3213; (IPC1-7): C01B33/00; H01L21/302
Domestic Patent References:
| JPS56134738A | 1981-10-21 | |||
| JPS5731140A | 1982-02-19 |
Attorney, Agent or Firm:
Hideto Asamura