Title:
MOUNTING METHOD OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS60148131
Kind Code:
A
Abstract:
PURPOSE:To prevent a pellet crack and a pellet stripping from generating when a pellet is adhered on a ceramic substrate having a low-melting point glass layer by a method wherein the ceramic substrate is heated to the softening point temperature of the low-melting point glass layer, pressure welding is applied on the low-melting point glass layer with a silicon flat plate and the low-melting point glass layer is heated to the fluid point temperature thereof. CONSTITUTION:A ceramic substrate 1 having a low-melting point glass layer 3 is heated by a heater block. After the glass layer 3 reached the softening point temperature thereof, a pressure welding is applied on the glass layer 3 with a silicon flat plate 7. The glass layer 3 is heated up to reach the fluid point temperature thereof, a pellet 4 is pressed from the upper part thereof and the pellet 4 is bonded on the substrate 1 through the glass layer 3. According to this way, no bubble generates in glass parts under the pellet 3, thereby enabling to prevent a pellet crack and a pellet stripping from generating.
Inventors:
KINOSHITA TAKASHI
Application Number:
JP432184A
Publication Date:
August 05, 1985
Filing Date:
January 13, 1984
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/52; H01L21/58; (IPC1-7): H01L21/58
Attorney, Agent or Firm:
Uchihara Shin