Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6032328
Kind Code:
A
Abstract:
PURPOSE:To lessen the reverse current as well as to improve the workability and the yield by a method wherein a resin for surface stabilization is provided on a modified layer obtained by implanting ions of more than one kind from among oxygen, nitrogen and carbon ions in the surface of a substrate whereon a p-n junction is exposed. CONSTITUTION:A modified layer 200; which is obtained by implanting ions of more than one kind among oxygen, nitrogen and carbon ions in the surface part of a silicon substrate, whereon a p-n junction is being exposed; is provided and a resin 40 for surface stabilization is provided on the modified layer 200. According to this method, as the modified layer 200 is formed by implanting ions in the exposed p-n junction part 100 and the active surface in action is made to shift into the interior of the silicon substrate, the form of the surface is stabilized, and moreover, the fluctuation of the characteristics is suppressed by applying with the resin 40 on the modified layer, thereby enabling to obtain a highly workable and reliable semiconductor device, whcih is not under influences of the outside such as hot air, etc.
Inventors:
MURAKAMI SUSUMU
MONMA NAOHIRO
INOUE KOUICHI
MISAWA YUTAKA
MONMA NAOHIRO
INOUE KOUICHI
MISAWA YUTAKA
Application Number:
JP14106983A
Publication Date:
February 19, 1985
Filing Date:
August 03, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L23/29; H01L21/265; H01L21/312; H01L21/314; H01L23/31; (IPC1-7): H01L21/265; H01L21/312; H01L23/30
Attorney, Agent or Firm:
Akio Takahashi