PURPOSE: To rapidly reduce the size of a semiconductor integrated circuit device with a simple structure and to improve the yield and the reliability of a product by providing capacitors on a transistor and a resistance element, and constructing the desired circuit.

CONSTITUTION: The base contact 1A1, the emitter contact 2Q1 and the collector contact 3Q1 of a transistor Q1 are respectively formed through a dielectric unit 10 on the p type impurity diffused region 12, the n+ type impurity diffused regin 13 and the n3 type impurity diffused region 14 of a substrate 11. The electrode 1C1 of the capacitor C1 is formed on the unit 10 so as not to contact at the time of forming the contact 2Q1. The capacitor C1 is formed to formed to become the state connected with the contact 2Q1 to form a capacitive drive circuit.