Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS59165435
Kind Code:
A
Abstract:
PURPOSE:To simplify the manufacturing process and to improve the integration by using anisotropic etching and selective epitaxial growth for formation of isolation regions among the elements. CONSTITUTION:An n type epitaxial layer 3 and an oxide film 4 consisting of SiO2 are formed on a p type substrate 1 in which an n<+> type burried layer 2 is formed and further groove-formed recesses 6 are formed in the portions which are to become the isolation regions. An oxide film 7 is formed over the whole surface including the inside surfaces of the recesses 6 and the oxide film at the bottoms 7a is removed by anisotropic etching. The ions are projected vertically on the surface of the object to be etched so that the oxide film on side- wall parts is not etched. Next, the selective epitaxial growth is performed to form epitaxial layers 8 which become the isolation regions in the recesses 6. Width of the epitaxial layer 8 to become the isolation region is limited by width of the recess 6 so that the integration can be improved.
Inventors:
ABE MOTOAKI
KATOU TOSHIO
UEKI YOSHIO
YAMOTO HISAYOSHI
KATOU TOSHIO
UEKI YOSHIO
YAMOTO HISAYOSHI
Application Number:
JP3915683A
Publication Date:
September 18, 1984
Filing Date:
March 11, 1983
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L27/08; H01L21/20; H01L21/76; H01L21/763; (IPC1-7): H01L21/20; H01L27/08
Attorney, Agent or Firm:
Akira Koike