Title:
PLASMA CVD PROCESSING METHOD
Document Type and Number:
Japanese Patent JPS6016418
Kind Code:
A
Abstract:
PURPOSE:To quickly obtain a thin film having uniform and sufficient thickness by mixing He gas of 20% or more to the mixed gas in the case of filling a hermetically sealed reservoir accommodating an object to be processed with H2 gas, N2 gas and film generating gas and generating a thin film on the object to be processed by ionizing such mixed gas by plasma. CONSTITUTION:A table 3 which is electrically insulated from a reservior 1 is provided in a hermetically sealed reservior 1 comprising a vacuum exhausting apparatus 2 and a plurality of objects to be processed by solution 4. At the outside of reservior 1, a DC high voltage power supply is provided and the negative terminal is connected to the table 3, while the positive terminal to the grounded reservior 1, respectively. At the outside of reservior 1, the bombs 6a- 6c containing H2 gas, N2 gas, He gas and a bubbling reservior 10 containing metal compound solution 11 such as TiCl4 are provided, the vaporized these gases are mixed and these are supplied to the reservior 1 through the flow meters 7a-7c and gas flow adjusting devices 8, 9. In such a structure, mixing amount of He gas is set to 20% or more and the TiN film combined by ionization is deposited at a high speed on the object to be processed 4.
Inventors:
MATSUZAWA TADASHI
Application Number:
JP12494383A
Publication Date:
January 28, 1985
Filing Date:
July 08, 1983
Export Citation:
Assignee:
JAPAN ELECTRONIC IND CORP
International Classes:
H01L21/205; H01L21/31; (IPC1-7): H01L21/205; H01L21/31
Domestic Patent References:
| JPS56116869A | 1981-09-12 | |||
| JPS5799731A | 1982-06-21 |