Title:
SEMICONDUCTOR SUBSTRATE CARRYING METHOD
Document Type and Number:
Japanese Patent JPS594040
Kind Code:
A
Abstract:
PURPOSE:To accurately control speed and location of wafers in different weights and shapes only with control of levitating pressure by using the gravity as a driving force for transferring wafers. CONSTITUTION:In a wafer transferring path structure, a wafer 2 is levitated by the gas blowing through the pores 1 in the region A. In this case, the pores 1 are inclined in order to give an initial speed and the gas is injected in the direction indicated by the arrow 3. In the area other than the region A of the transferring path, the pores are provided at a right angle and the gas is injected upward. In the region B, gas flow is accelerated by utilizing gravity, the gas flows in the equal speed in the region C, but decelerated in the region D and is stopped in the region E. According to this method, speed and position are depending only on the inclination angle but on flow rate of gas and weight of wafer. Therefore, control can be realized with good reproducibility.
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Inventors:
MACHIDA AKIRA
FUJII MIKIO
FUJII MIKIO
Application Number:
JP11283682A
Publication Date:
January 10, 1984
Filing Date:
June 30, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/677; H01L21/68; (IPC1-7): H01L21/68
Domestic Patent References:
| JPS57128940A | 1982-08-10 | |||
| JPS5840841B2 | 1983-09-08 | |||
| JPS56169345A | 1981-12-26 | |||
| JPS5323599A | 1978-03-04 |
Attorney, Agent or Firm:
Sadaichi Igita
Next Patent: JPS594041