Title:
PHOTOCONDUCTOR
Document Type and Number:
Japanese Patent JPS60123075
Kind Code:
A
Abstract:
PURPOSE:To obtain a photoconductor having high resolution, high sensitivity and low dark currents by adding an impurity mainly comprising a VI group unequal in the direction of film thickness to at least one part of an amorphous silicon film. CONSTITUTION:A first electrode 11 is formed on a support 10. Mo, Ta, W, Al, In2O3, SnO2 or the like is used as a material for the electrode 11. The support is mounted into a sputtering device, the inside of the sputtering device is evacuated up to 2X10<-6>Torr, a substrate is kept at 250 deg.C, and an amorphous silicon film 12 is formed in an atmosphere of 4.5X10<-5>Torr argon pressure and 5X10<-4> Torr hydrogen pressure while using polycrystalline silicon as a target. Film thickness of 0.5-3mum is obtained through evaporation for 30-300min at 100- 400W discharge power. When forming the amorphous silicon film 12, a section 13 in which a VI group impurity is added so as to be partially distributed in the direction of film thickness is shaped. Partial distribution can be acquired by controlling addition time during sputtering evaporation for 30-300min.
Inventors:
CHIKAMURA TAKAO
TAKEDA ETSUYA
YANO KOUSAKU
TAKEDA ETSUYA
YANO KOUSAKU
Application Number:
JP23171783A
Publication Date:
July 01, 1985
Filing Date:
December 08, 1983
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L31/0248; H01L27/146; H01L31/08; H01L31/09; H01L31/20; (IPC1-7): H01L31/08
Domestic Patent References:
| JPS57115554A | 1982-07-19 | |||
| JPS56115573A | 1981-09-10 |
Attorney, Agent or Firm:
Akira Kobiji (2 outside)