Title:
PREPARATION OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS5833822
Kind Code:
A
Abstract:
PURPOSE:To form stable single crystalline Si layer covering the whole area by irradiating light beam or electron beam to the polycrystalline or amorphous Si layer deposited on the silicon nitride film over the whole area. CONSTITUTION:The light beam or electron beam is irradiated to the polycrystalline or amorphous Si layer 3 entirely deposited on the Si nitride film 6 formed on the Si substrate 1 via the Si oxide film 2 formed as the basic layer. Thereby, the adequate region of power of irradiated beam used for stable single- crystallization for the whole area of the Si layer can be extended without disappearance of even a part of Si of the Si layer, because disappearance of silicon of the polycrystalline Si layer 3 can be prevented due to the existence of Si nitride film 6 between the Si oxide film 2 and the polycrystalline Si layer 3.
Inventors:
ISU TOSHIROU
Application Number:
JP13235681A
Publication Date:
February 28, 1983
Filing Date:
August 21, 1981
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/20; H01L21/86; (IPC1-7): H01L21/263; H01L21/84
Other References:
IEDM TECHNICAL DIGEST=1972
Attorney, Agent or Firm:
Shinichi Kusano