Title:
BASE BOARD FOR MOUNTING OF SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JPS60128625
Kind Code:
A
Abstract:
PURPOSE:To obtain the circuit board of excellent heat conductivity on which a high frequency semiconductor element can be mounted by a method wherein a diamond, an artificial diamond-like carbon film or the mixture substance of these materials is coated on a metal base board as an electric insulating layer. CONSTITUTION:A metal base board 1 has the thermal expansion coefficient of 4.5-9.0X10<-6>cm/cm deg.C, and said thermal expansion coefficient is made approximate to the thermal expansion coefficient of the crystal of a semiconductor element 4 using the specific material such as Cu, W, Mo and the like which has excellent heat conductivity, thereby enabling to reduce the effect of stress generating from the unmatching of thermal expansion. Also, the degree of thermal conductivity of the metal base board 1 is enhanced as much as possible, and the dissipating property of the heat generated on the semiconductor element 4 is increased. Then, an electric insulating film layer 2 is formed on the thickness of 5-20mum using the mixed substance of diamond and the like having the dielectric constant of 2.5-8. Subsequently, a circuit pattern 3 is formed using one of Al, Ni, Ag, Au and AgPd alloy, or it is formed by combining said material.
Inventors:
OGASA NOBUO
DOI AKIRA
OOTSUKA AKIRA
FUJIMORI NAOHARU
YOSHIOKA TAKESHI
DOI AKIRA
OOTSUKA AKIRA
FUJIMORI NAOHARU
YOSHIOKA TAKESHI
Application Number:
JP23760383A
Publication Date:
July 09, 1985
Filing Date:
December 15, 1983
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L21/52; H01L21/58; H05K1/05; (IPC1-7): H01L23/36
Domestic Patent References:
| JPS5815241A | 1983-01-28 |
Attorney, Agent or Firm:
Bunji Kamata