PURPOSE: To obtain quickly and stably a sharp image by subjecting the photosensitive resin layer provided further on a thin Al metallic layer on a base to image exposing and dissolving away the soluble part of the photosensitive resin layer with a developing soln. then treating the exposed thin Al metallic layer with an etching soln. contg. specific three components.
CONSTITUTION: An Al metal is formed by a plasma treatment, etc. to 50W 3,000 thickness on a base of glass, PP, etc. A photosensitive resin (e.g.; diazo photosensitive resin of alkali developing type) layer for aq. development is formed on said thin Al metallic layer at 0.1W20μ film thickness. The photosensitive resin layer is subjected to image exposing from resin layer side and thereafter the soluble part of the resin layer is dissolved away, whereby the developing treatment is performed. The exposed thin Al metallic layer is etched with an etching soln. contg. the three components; 0.5W30wt% total of compd. of ≥1 kind among HF, NH4F, and ammonium hydrogenfluoride, 0.2W5wt% CuO and 0.01W30wt% HNO3, whereby an intended image forming material is obtd.
| JPS57122531 | ETCHING METHOD |
| JPH09251943 | RESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE |
| JP2000256861 | MASKING MATERIAL |
KUMAGAI KOUJI
ITOU YOSHIYASU
KODAIRA TAKEO
