FIELD EFFECT TRANSISTOR - NIPPON TELEGRAPH & TELEPHONE

Title:

FIELD EFFECT TRANSISTOR

Document Type and Number:

Japanese Patent JPS58140168

Kind Code:

A

Abstract:

PURPOSE: To make the field effect transistor to have long life and high reliability by a method wherein an extremely thin In1-xGaxAsyP1-y layer is made as the active region, and a semiconductor GaAs layer, etc., attained with lattice matching to the region thereof and having a band gap larger than the region thereof is provided thereon interposing the region between them.

CONSTITUTION: An extremely thin InI-xGaxAsyP1-y layer 3 is made as an active region, and a semiconductor ZnSe or In1-xGaxAsyP1-y layer 4 attained with lattice matching to the region thereof, and moreover having the band gap larger than the region thereof is provided thereon interposing the region thereof between them to compose the construction of an FET. By composing the FET with the ZnSe layer and the In1-xGaxAsyP1-y crystal attained with lattice matching strictly to the ZnSe layer like this, the FET can be made to have no deterioration, to be stable, and to have long life and high reliability.

Inventors:

ADACHI SADAO

Application Number:

JP2211382A

Publication Date:

August 19, 1983

Filing Date:

February 16, 1982

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE

International Classes:

H01L29/80; H01L21/331; H01L21/338; H01L29/267; H01L29/73; H01L29/778; H01L29/812; (IPC1-7): H01L29/12

Attorney, Agent or Firm:

Toshio Takayama

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