PURPOSE: To enable a charge transfer section to be formed large in area concurrently making photodetective elements large in area so as to make a solid-state image sensing device high enough in sensitivity and dynamic range by a method wherein a photodetective element is formed on a single crystal first semiconductor substrate, and a charge transfer section used for transferring charge induced the photodetective element is provided to a second semiconductor substrate pasted on the first semiconductor substrate.

CONSTITUTION: Signal charge is induced in photodiodes 3 formed on a silicon substrate 1 corresponding to light rays incident on the photodiodes 3. The induced signal charge is transferred to an N+-type impurity region 18 of a silicon substrate 2 through the intermediary of a polysilicon layer 19. For instance, if transfer electrode layers 15a and 15b are driven in a ternary level, a channel is made to be formed between the impurity region 18 and the an N--type impurity region 13 when the transfer electrode layer 15a becomes highest in potential, whereby signal charge in the impurity region 18 is transferred to the impurity region 13. The prescribed clock signal is given to the transfer electrode layers 15a and 15b, after the signal charge of the impurity region 13 is transferred in a vertical direction, and then it is transferred in a horizontal direction and finally read out.