Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5814551
Kind Code:
A
Abstract:
PURPOSE:To lessen the interval of wiring and thus make a device highly integrated, by opening a window in an insulation film on a semiconductor substrate, superimposing a conductor and the second insulation film, and removing the conductor by etching by using the third insulation film as a mask. CONSTITUTION:PSG4 having a window 5 is connected to a substrate 2 having a diffusion layer 3, Al 10 is laid thereon, and an insulation film 11 is applied thereon by rotation. Then, the laminate thus prepared is incinerated by plasma, thereby the insulation film 11 is left very thinly in a part other than a concave part, and, with a positive resist mask 12 given, Al 10 is paterned by sputter etching. When the resist 12 and the insulation film 11 are removed. The Al wiring 10 with the window 4 buried entirely is completed. According to this constitution, the increase in the width of wiring in a connection window part is avoided, the window can be buried completely by the wiring even when there exists some slippage in positions of the wiring and connection, and the interval of the wiring can be lessened. Thus, the device can be made highly integrated.
Inventors:
TANIMOTO YOSHIAKI
ABIRU AKIRA
ABIRU AKIRA
Application Number:
JP11189781A
Publication Date:
January 27, 1983
Filing Date:
July 17, 1981
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/3213; (IPC1-7): H01L21/88
Attorney, Agent or Firm:
Koshiro Matsuoka