PURPOSE: To inhibit dark currents and blooming by storing charges having conductivity reverse to signal charges in a light-receiving region in a CCD solid- state image pickup device using an MOS diode as a light-receiving section.

CONSTITUTION: An n type layer 2 constituting a buried channel for a vertical shift register and an n type layer 13 constituting a light-receiving section are connected by a region 4 left as it is a p layer, and channel stops 7 are formed to sections except the layer 2 and the layer 13. An electrode 9 for the vertical shift register is shaped to the upper section of the n type layer 2, and a photo- gate electrode 10 is formed to the upper section of the light-receiving section 13 through an insulating film 8. Reverse bias is applied among the channel stops by the p type layer and an n substrate 14. Negative voltage is applied to the electrode 10, and charges having conductivity reverse to signal charges are stored on the interface between the layer 13 and the insulating film 8. An interface level is buried by the storage of charges, and the generation of dark currents is inhibited. Signal charges are stored while the potential of the layer 13 is shallowed, excessive signal charges flow out to the n substrate side, and blooming is inhibited.