Title:
IMPURITY CONCENTRATION MEASURING METHOD
Document Type and Number:
Japanese Patent JPS6127650
Kind Code:
A
Abstract:
PURPOSE:To effect a measurement of impurity concentration with simplicity and rapidity by a method wherein a prescribed semiconductor layer is formed on the object under test and is subjected to heat treatment. CONSTITUTION:An SiO2 film 2 is formed on a silicon substrate 1, a PSG film 3 wherefor P concentration is to be measured, and then heat treatment is accomplished in an H2 atmosphere. Diffusion takes place of P out of the PSG film 3, lowering the P concentration in the surface of the PSG film 3. A polycrystalline silicon film 4 is deposited on the PSG film 3, and then heat treatment is accomplished in an N2 atmosphere for P in the PSG film 3 to be diffused into the polycrystalline silicon film 4. The film 4 is subjected to angle lapping together with the film 3 and others, and the P concentration profile is measured along the direction of thickness of the film 4 by the spreading resistance method (SR method). Comparison is made with a reference specimen for the measurement of the quantative change in the P concentration in the PSG film 3 attributable to the diffusion outward of P due to the heat treatment. P concentration may be measured even when the PSG film 3 is very small in thickness.
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Inventors:
FUTAJIMA OSAMU
Application Number:
JP14904384A
Publication Date:
February 07, 1986
Filing Date:
July 18, 1984
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/66; (IPC1-7): H01L21/66
Attorney, Agent or Firm:
Tsuchiya Masaru