Title:
TRANSFER MASK
Document Type and Number:
Japanese Patent JP3246849
Kind Code:
B2
Abstract:
PURPOSE: To obtain a transfer mask having a metal layer satisfying various requirements as a metal layer and having excellent property for practical use such as durability by forming an iridium layer at least on a transfer mask surface.
CONSTITUTION: In this transfer mask constituted by forming through-holes 11 in a thin film part 13 supported by a supporting frame 12, an iridium layer 2 is formed at least on the transfer mask surface. In this method, a silicon substrate 1 is machined by well-known methods to form through-holes 11 in the thin film part 13 supported by a supporting frame 12 to produce the transfer mask. Furthermore, an iridium layer 2 is formed on the surface of the transfer mask by a thin film forming method. The iridium layer 2 may be a single layer of iridium or may have a laminar structure of iridium layer/tungsten layer/iridium layer (sandwich structure). Or, the iridium layer 2 may be formed into a gradient structure in which the interface with the substrate is made of IrO2 and the amt. (x) of O in TrOx decreases to zero with deposition of the layer. Thereby, the effect to prevent oxidation of the surface or to prevent diffusion or adhesion property with the substrate can be controlled.
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Inventors:
Isao Amemiya
Application Number:
JP6691195A
Publication Date:
January 15, 2002
Filing Date:
March 01, 1995
Export Citation:
Assignee:
Hoya Co., Ltd.
International Classes:
G03F1/48; H01L21/027; (IPC1-7): G03F1/14; H01L21/027
Domestic Patent References:
| JP494523A | ||||
| JP61269313A | ||||
| JP6093440A | ||||
| JP4711A | ||||
| JP2123730A | ||||
| JP55161242A | ||||
| JP62263636A |
Attorney, Agent or Firm:
Yasuo Fujimura
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