Title:
TRANSFER MATERIAL, PATTERN FILM FORMING METHOD, AND MANUFACTURING METHOD OF LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2009021126
Kind Code:
A
Abstract:
To provide a patterning method of a semiconductor element by a transfer process, to provide a transfer material used in the same, the semiconductor element being a light-emitting element of an organic light-emitting element or an inorganic light-emitting element, and to provide a manufacturing method of the semiconductor element using the patterning method by the transfer process.
With respect to the transfer material used in patterning by the transfer method of the semiconductor element, a polymer layer of a thickness of 50 nm to 20 m as a buffer layer, and a transfer layer are formed on a metal mold having a pattern.
Inventors:
TADA HIROSHI
HIDA TSUTOMU
HIDA TSUTOMU
Application Number:
JP2007183431A
Publication Date:
January 29, 2009
Filing Date:
July 12, 2007
Export Citation:
Assignee:
FUJIFILM CORP
International Classes:
H05B33/22; H01L51/50; H05B33/10
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda