Title:
TRANSISTOR MATRIX DEVICE AND ITS DRIVING METHOD
Document Type and Number:
Japanese Patent JP3688786
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a thin-film transistor matrix device with which the formation of auxiliary capacitors having a large capacitance value is possible and which obviates the degradation in the yield of production.
SOLUTION: This transistor matrix device is provided with plural pieces of gate bus lines 16n, 16n+1, 16n+2,... and drain bus lines 18m, 18m+1,... in parallel. The device is provided with the TFTs 14 near the bottom ends of auxiliary patterns 30n, 30n+1, 30n+2,... The source electrodes 36 of the TFTs 24 are connected via contact holes 38 to pixel electrodes 12. These pixel electrodes 12 are formed in the positions beyond the gate bus lines 16n, 16n+1, 16n+2,... of the next row. Intermediate electrodes 40 for forming the auxiliary capacitors are formed at the bottom ends of the pixel electrodes 12.
Inventors:
Go Kamada
Yoji Nagase
Katsushige Asada
Yoji Nagase
Katsushige Asada
Application Number:
JP1752696A
Publication Date:
August 31, 2005
Filing Date:
February 02, 1996
Export Citation:
Assignee:
Fujitsu Display Technologies Limited
International Classes:
G02F1/136; G02F1/133; G02F1/1362; G02F1/1368; H01L29/786; (IPC1-7): G02F1/1368; G02F1/133; H01L29/786
Domestic Patent References:
| JP8248439A | ||||
| JP5297405A | ||||
| JP5173138A |
Attorney, Agent or Firm:
Yoshito Kitano
Junichi Yokoyama
Junichi Yokoyama
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