Title:
トランジスタ
Document Type and Number:
Japanese Patent JP6563853
Kind Code:
B2
Abstract:
The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included in a semiconductor device includes a first oxide semiconductor film over a first insulating film, a gate insulating film over the first oxide semiconductor film, a second oxide semiconductor film over the gate insulating film, and a second insulating film over the first oxide semiconductor film and the second oxide semiconductor film. The first oxide semiconductor film includes a channel region in contact with the gate insulating film, a source region in contact with the second insulating film, and a drain region in contact with the second insulating film. The second oxide semiconductor film has a higher carrier density than the first oxide semiconductor film.
Inventors:
Junichi Koizuka
Masami Nagasawa
Gyoutoku Shima
Masami Nagasawa
Gyoutoku Shima
Application Number:
JP2016097633A
Publication Date:
August 21, 2019
Filing Date:
May 16, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; G09F9/00; G09F9/30; H01L21/8242; H01L27/108
Domestic Patent References:
| JP2012033836A | ||||
| JP2012129511A | ||||
| JP2014197444A | ||||
| JP2012151460A |
Foreign References:
| US20120032173 | ||||
| US20120132902 | ||||
| US20120161125 |