Title:
TRANSISTORS WITH HIGH CONCENTRATION OF BORON DOPED GERMANIUM
Document Type and Number:
Japanese Patent JP2018113484
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide transistors with a high concentration of boron-doped germanium.SOLUTION: An in situ boron (B)-doped germanium (Ge), or alternatively, B-doped silicon germanium (SiGe) capped with a heavily B-doped Ge layer, are provided using selective epitaxial deposition in source and drain regions 110, 112 and their corresponding tip regions 110B, 112B. The Ge germanium concentration can be in excess of 50 atom% and up to 100 atom%, and the B concentration can be in excess of 1E20 cm-3. A buffer providing graded Ge and/or B concentrations can be used to improve interfaces between multiple layers. The concentration of B doped in the Ge at the epitaxial-metal interface substantially lowers parasitic resistance without degrading tip abruptness.SELECTED DRAWING: Figure 1B
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Inventors:
ANAND S MURTHY
GLENN A GLASS
TAHIR GHANI
RAVI PILLARISETTY
NILOY MUKHERJEE
JACK T KAVALIEROS
ROZA KOTLYAR
WILLY RACHMADY
MARK Y LIU
GLENN A GLASS
TAHIR GHANI
RAVI PILLARISETTY
NILOY MUKHERJEE
JACK T KAVALIEROS
ROZA KOTLYAR
WILLY RACHMADY
MARK Y LIU
Application Number:
JP2018080942A
Publication Date:
July 19, 2018
Filing Date:
April 19, 2018
Export Citation:
Assignee:
INTEL CORP
International Classes:
H01L21/336; H01L29/78; H01L29/786
Domestic Patent References:
| JP2007214481A | 2007-08-23 | |||
| JP2007165665A | 2007-06-28 | |||
| JP2009164281A | 2009-07-23 |
Foreign References:
| US20050130454A1 | 2005-06-16 | |||
| US20100148217A1 | 2010-06-17 |
Attorney, Agent or Firm:
Longhua International Patent Service Corporation