Title:
TRANSPARENT CONDUCTIVE FILM AND ITS FORMING METHOD
Document Type and Number:
Japanese Patent JP2004014439
Kind Code:
A
Abstract:
To provide a transparent conductive film with excellent productivity, adhesion to a base material and low resistance and to provide its forming method.
In this forming method of a transparent conductive film, the transparent conductive film is formed by exposing the base material to a gas brought into a plasma state by introducing it into a discharge space at the atmospheric pressure or at pressure close to the atmospheric pressure and by applying an electric field. The formation method of the transparent conductive film is characterized by that a deposition speed is 2-20 nm/sec, and the carbon content by XPS of the transparent conductive film after the film formation is 0.1-3 atom%.
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Inventors:
MAMIYA KANEO
TSUJI TOSHIO
KIYOMURA TAKATOSHI
ITO HIROTO
TSUJI TOSHIO
KIYOMURA TAKATOSHI
ITO HIROTO
Application Number:
JP2002169801A
Publication Date:
January 15, 2004
Filing Date:
June 11, 2002
Export Citation:
Assignee:
KONICA MINOLTA HOLDINGS INC
International Classes:
G02F1/1343; C08J7/00; C08J7/06; C23C16/40; H01B5/14; H01B13/00; H01L51/50; H05B33/28; H05B33/14; (IPC1-7): H01B13/00; C08J7/00; C08J7/06; C23C16/40; G02F1/1343; H01B5/14