Title:
TRANSPARENT CONDUCTIVE FILM AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3489844
Kind Code:
B2
Abstract:
PURPOSE: To obtain a transparent conductive film and a manufacturing method thereof excellent in steam barrier characteristic, oxygen barrier characteristic, conductivity and transparency further with large sticking force between a film substrate and a transparent barrier thin film.
CONSTITUTION: In a transparent conductive film, a transparent barrier thin film of metal oxide, mainly composed of silicon oxide, or metal nitride, mainly composed of silicon nitride, is formed by 20 to 100nm thickness and further a transparent conductive thin film of metal oxide, mainly composed of indium oxide, is formed by 20 to 200nm thickness, on a transparent film substrate. The transparent barrier thin film containing this film substrate has 1ml/m2/day or less oxygen permeability, 1g/m2/day or less steam permeability and further 100g/cm or more sticking force between the film substrate and the transparent barrier thin film.
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Inventors:
Ryuho Miyazaki
Akiho Hayashi
Kenji Matsumoto
Koji Saiki
Akiho Hayashi
Kenji Matsumoto
Koji Saiki
Application Number:
JP34284992A
Publication Date:
January 26, 2004
Filing Date:
December 22, 1992
Export Citation:
Assignee:
Kanegafuchi Chemical Industry Co., Ltd.
International Classes:
B32B9/04; C08J7/06; C23C14/06; C23C14/08; C23C14/35; H01B5/14; H01B13/00; (IPC1-7): H01B5/14; B32B9/04; C08J7/06; C23C14/06; C23C14/08; C23C14/35; H01B13/00
Domestic Patent References:
| JP1130408A | ||||
| JP1130409A | ||||
| JP63108614A | ||||
| JP4306513A | ||||
| JP62136562U |
Attorney, Agent or Firm:
Shusaku Yamamoto
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