To provide a transparent conductive laminate having a low resistance transparent conductive film in which lamination can be carried out in-line by using a sputtering target of different composition, and crystallinity can be provided by short time heating treatment, and to provide a manufacturing method therefor.
The transparent conductive film is formed of a first transparent conductive film 3a composed of an indium/tin composite oxide containing In, Sn, O as main components where the content of Sn is 1-4 wt.%, and a second transparent conductive film 3b composed of an indium/tin composite oxide similarly containing In, Sn, O as main components where the content of Sn is 4-10 wt%. Thickness of the first and second transparent conductive films is 10-30 nm, and the total thickness of both transparent conductive films is 20-40 nm. The first and second transparent conductive films can be crystallized by heating treatment under such conditions that the heating temperature in vacuum is 120-200°C, and the heating time is 1-30 min.
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
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