TREATING METHOD OF OFF GAS GENERATED FROM SEMICONDUCTOR PROCESS CHAMBER

Japanese Patent JP2005144450

A

To provide a method for selecting, using, regenerating, and recycling fluorochemicals for plasma cleaning and etching processes for semiconductor device manufacture.

This method is for treating off gas generated from the semiconductor process chamber and containing a less reactive fluorochemical and a more reactive fluorochemical. The method comprises a fluorination process in which a concentration of the less reactive fluorochemical increases; and a defluorination process in which the more reactive fluorochemical is selectively removed. This invention allows the efficient use of the most cost-effective and safe chamber cleaning gases without adversely affecting the environment.

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SATCHELL DONALD PRENTICE JR

JP2004328710A

June 09, 2005

November 12, 2004

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BOC GROUP INC

H01L21/02; B01D53/34; B01D53/68; B01D53/70; C23C16/44; C23C16/455; H01L21/302; H01L21/304; H01L21/3065; (IPC1-7): B01D53/68; B01D53/34; H01L21/3065

Kazuo Shamoto
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shurin Sakurai

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