Title:
TREATING METHOD OF SEMICONDUCTOR COMPLEX
Document Type and Number:
Japanese Patent JPS55143037
Kind Code:
A
Abstract:
PURPOSE:To suppress the dissolution of a metal electrode when an Si semiconductor having the electrode is treated with an etching liquid comprising a hydrofluoric acid and nitric acid, by composing the etching liquid by four element, i.e. hydrofluoric acid, nitric acid, concentrated sulfuric acid and boric acid. CONSTITUTION:A semiconductor complex, in which a metal electrode is attached to an Si semiconductor, is treated with an Si etching liquid comprising hydrofluoric acid and nitric acid and is thereafter washed in water. The etching liquid is composed of hydrofluoric acid, nitric acid, concentrated sulfuric acid and boric acid. The quantity of the hydrofluoric acid is 44-48% by volume. The quantity of the nitric acid is 30-32% by volume. The quantity of the concentrated sulfuric acid is 20-26% by weight. The quantity of the boric acid is 110-180g/l. As a result, only Si is dissolved at a room temperature of 15-20 deg.C within a short time of 8- 10 seconds and the metal gets its surface made glossy but is not eroded.
Inventors:
KOYAMA SUSUMU
OKAJIMA YOSHIAKI
TSURUOKA MASAO
OKAJIMA YOSHIAKI
TSURUOKA MASAO
Application Number:
JP5033979A
Publication Date:
November 08, 1980
Filing Date:
April 25, 1979
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/308; H01L21/306; (IPC1-7): H01L21/306