Title:
TREATMENT OF GALLIUM RAW MATERIAL TO BE USED FOR PREPARATION OF GALLIUM CRYSTAL
Document Type and Number:
Japanese Patent JPS6086095
Kind Code:
A
Abstract:
PURPOSE:In preparation of Ga crystal by liquid sealing pulling method, to make cooling of Ga raw material during its storage or during its transportation unnecessary, and to keep it always in a usable state, by covering the Ga raw material with B2O3 raw material as a liquid sealant. CONSTITUTION:Firstly, Ga is weighed at room temperature, it is optionally heated close to its melting point in a container with dry N2, and molded into an arbitrary shape such as a dislike shape. A given amount of B2O3 is weighed, heated close to its melting point similarly in a container with dry N2, and a main body and a cover are molded. The main body has a storing part to put the Ga disk in it, the Ga disk is stored in it, the opening is covered with the cover, only the contact part between the cover and the main body is heated to >= the melting point of B2O3, and the cover and the main body are integrated. In the operation, when a lot space exists in the storing part of the Ga disk, preferably N2 in an atmosphere gas is exhausted. The covering of the Ga raw material with B2O3 makes storage and transportation at normal temperature possible, and makes handling extremely easy.
Inventors:
SHIMADA TAKASHI
Application Number:
JP19085283A
Publication Date:
May 15, 1985
Filing Date:
October 14, 1983
Export Citation:
Assignee:
KOGYO GIJUTSUIN
International Classes:
C30B27/02; C30B29/40; (IPC1-7): C30B27/02; C30B29/40