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Title:
TREATMENT METHOD
Document Type and Number:
Japanese Patent JPS62165937
Kind Code:
A
Abstract:

PURPOSE: To improve wettability with a treating liquid of the whole material to be treated, and to prevent the nonuniformity of treatment by exposing the material to be treated in a liquefied or gassy substance having compatibility with the treating liquid prior to the treatment of the material to be treated.

CONSTITUTION: A wafer type treating liquid is used for etching and rinsing an Si substrate, the surface thereof has fine irregularities. A substance, which has small adsorptivity to Si, is easy to be replaced with the water type treating system and has a hydrophilic group and a hydrophobic group in a molecule thereof, methanol acetic acid, acetone, etc., their mixture and a mixture with water are employed as a liquid or a gas having compatibility with the water group treating liquid. When the Si substrate is dipped or brought into contact to the liquid, the hydrophilic groups and hydrophobic groups selectively deposit on the surface, and the Si substrate is easy to be wetted by hydrophilic and hydrophobic treating liquids as a whole. Since a deposit has compatibility with the water group treating liquid and is dissolved during treatment and has small surface tension, bubbles are easy to be desorbed, and the Si substrate can be treated uniformly. Lastly, the adhering treating liquid is washed away by a pure water.


Inventors:
MAEDA YORIHISA
SUZUKI TAKASHI
YAMAMOTO SHIGEYUKI
Application Number:
JP820986A
Publication Date:
July 22, 1987
Filing Date:
January 17, 1986
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/306; G03F7/00; G11B7/26; H01L21/027; H01L21/30; H01L21/304; (IPC1-7): G03F7/00; G11B7/26; H01L21/30; H01L21/304; H01L21/306
Attorney, Agent or Firm:
Toshio Nakao



 
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