Title:
ランタン入りタングステンイオン源およびビームラインコンポーネント
Document Type and Number:
Japanese Patent JP7091254
Kind Code:
B2
Abstract:
An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.
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Inventors:
Neil Corvin
Che, Tse Jen
Silva Stein, Paul
Che, Tse Jen
Silva Stein, Paul
Application Number:
JP2018557048A
Publication Date:
June 27, 2022
Filing Date:
May 15, 2017
Export Citation:
Assignee:
Axcelis Technologies, Inc.
International Classes:
H01J27/02; H01J37/08; H01J37/317
Domestic Patent References:
| JP2001093431A | ||||
| JP2007531214A | ||||
| JP2015225720A | ||||
| JP2010080446A | ||||
| JP57138744A | ||||
| JP5451461A |
Foreign References:
| WO2015023903A1 | ||||
| CN106498360A |
Other References:
HAUBLEIN,V. et al.,Investigation of lanthanum contamination from a lanthanated tungsten ion source,ION IMPLANTATION TECHNOLOGY,IEEE,2003年,p.346-349
Attorney, Agent or Firm:
Patent business corporation HARAKENZO WORLD PATENT & TRADEMARK