PURPOSE: To facilitate an increase in number of pixels and to read a still picture with high resolution and high sensitivity by forming each pixel of only a photoelectric converter and an access transistor to be manufactured in the same steps as those of a MOS transistor.
CONSTITUTION: A pixel formed of a photoelectric converter 2 and an access transistor 3 arranged two-dimensionally is provided on a semiconductor substrate 1. It has vertical scanning lines 4a-4c connected commonly to a gate electrode of the transistor 3 at each row, horizontal scanning lines 5a-5c connected commonly to a drain electrode of the transistor 3 at each row, and horizontal scanning switches 6a-6c, etc. It also has a control electrode commonly for all the pixels deposited on an imaging surface. A reset voltage is applied to the electrode to project light to the entire imaging surface to reset floating gates to a reset voltage through a photoelectric conversion film 11.
YAMAMOTO YASUNAGA
OKAMOTO TATSUSHIZU
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