Title:
紫外線発光素子
Document Type and Number:
Japanese Patent JP7405554
Kind Code:
B2
Abstract:
To provide an ultraviolet light-emitting element with higher emission intensity.SOLUTION: An ultraviolet light-emitting element 10 includes a substrate 1, a nitride semiconductor layer 2 with a first conductivity type formed on the substrate and containing Al and Ga, a light-emitting layer 32 formed on the nitride semiconductor layer with the first conductivity type and formed of a material including a nitride semiconductor containing Al and Ga, and a nitride semiconductor layer 35 with a second conductivity type formed on the light-emitting layer and having a conductivity type different from that of the nitride semiconductor layer with the first conductivity type. The light-emitting layer 32 includes at least one quantum well layer and a quantum barrier wall layer holding the quantum well layer. In the quantum barrier wall layer, the Al composition (%) of the nitride semiconductor in the material is inhomogeneous in a depth direction, and the change quantity of the Al composition (%) in the depth direction is 5% or more and 12% or less.SELECTED DRAWING: Figure 2
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Inventors:
Yo Yoshikawa
Takakiyo Nagatomi
Ryosuke Hasegawa
Zhang Azusa
Takakiyo Nagatomi
Ryosuke Hasegawa
Zhang Azusa
Application Number:
JP2019181599A
Publication Date:
December 26, 2023
Filing Date:
October 01, 2019
Export Citation:
Assignee:
ASAHI KASEI KABUSHIKI KAISHA
International Classes:
H01L33/32; H01L33/06
Domestic Patent References:
| JP2013065630A | ||||
| JP2008523623A | ||||
| JP2006210692A | ||||
| JP2001237457A | ||||
| JP4174585A |
Foreign References:
| WO2018051772A1 | ||||
| US20140332754 |
Attorney, Agent or Firm:
田中 秀▲てつ▼
Tetsuya Mori
Tetsuya Mori
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