Title:
高い垂直磁気異方性を示す極薄垂直磁化膜、その製造方法及び用途
Document Type and Number:
Japanese Patent JP5765721
Kind Code:
B2
Abstract:
Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1×106 erg/cm3 or more and the saturated magnetization is 200 emu/cm3 or more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.
Inventors:
Hayashi Masamitsu
Gybal Dan Sinha
Masaya Kozuka
Nakaya Tomoya
Yukiko Takahashi
Takao Kobayashi
Seiji Mitani
Kazuhiro Takarano
Gybal Dan Sinha
Masaya Kozuka
Nakaya Tomoya
Yukiko Takahashi
Takao Kobayashi
Seiji Mitani
Kazuhiro Takarano
Application Number:
JP2014506289A
Publication Date:
August 19, 2015
Filing Date:
March 22, 2013
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
G11B5/64; G11B5/738; G11B5/851; H01F10/16; H01F10/28; H01L21/8246; H01L27/105; H01L43/08; H01L43/10
Domestic Patent References:
| JP2011023729A | ||||
| JP2011146089A | ||||
| JP2010118147A | ||||
| JP2008097685A |
Foreign References:
| US20090155628 |
Attorney, Agent or Firm:
Asamura patent office