Title:
ULTRAVIOLET PHOTODETECTOR
Document Type and Number:
Japanese Patent JP3894790
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an ultraviolet photodetector having a device structure of dispensing with the contact layer of an ohmic electrode for an n-type semiconductor layer.
SOLUTION: An ultraviolet photodetector is equipped with a device structure having at least an n-type semiconductor layer of AlxGa1-xN (0≤x≤1), and a pair of electrodes provided at the prescribed sites on the device structure. A photodetection region formed of one or more semiconductor layers in the device structure is provided in the ultraviolet photodetector. One of the electrodes formed on the n-type semiconductor layer is an ohmic electrode containing ZrB2.
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Inventors:
Plain light
Satoshi Ueyama
Hiroshi Amano
Isamu Akasaki
Satoshi Ueyama
Hiroshi Amano
Isamu Akasaki
Application Number:
JP2001397109A
Publication Date:
March 22, 2007
Filing Date:
December 27, 2001
Export Citation:
Assignee:
OSAKA GAS CO.,LTD.
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JP2001127334A | ||||
| JP6248454A | ||||
| JP429375A | ||||
| JP338877A | ||||
| JP563237A |
Attorney, Agent or Firm:
Shuichiro Kitamura
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