Title:
イオン注入レジストの除去のための非酸化性の強酸の使用
Document Type and Number:
Japanese Patent JP6776125
Kind Code:
B2
Abstract:
A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.
Inventors:
Stephen Bilodo
Cooper, Emmanuel Eye.
Lee, Jesuk
Kim, Wong Lae
Burns, Jeffrey A.
Cooper, Emmanuel Eye.
Lee, Jesuk
Kim, Wong Lae
Burns, Jeffrey A.
Application Number:
JP2016560865A
Publication Date:
October 28, 2020
Filing Date:
December 19, 2014
Export Citation:
Assignee:
Entegris Incorporated
Entegris Korea Limited
Entegris Korea Limited
International Classes:
C11D3/04; G03F7/42; C11D3/20; C11D3/24; C11D3/43; C11D7/08; C11D7/26; C11D7/28; C11D7/50; H01L21/027; H01L21/265; H01L21/266; H01L21/304; H01L21/308
Domestic Patent References:
| JP2008084883A | ||||
| JP2007328153A | ||||
| JP2010524208A |
Foreign References:
| WO2004019134A1 |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation