Title:
珪炭窒化バナジウム膜、珪炭窒化バナジウム膜被覆部材およびその製造方法
Document Type and Number:
Japanese Patent JP6963932
Kind Code:
B2
Abstract:
A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30≤a/b≤1.3 and 0.30≤a+b≤0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.
Inventors:
Satoshi Habuka
Hiroyuki Matsuoka
Wataru Sakakibara
Hiroyuki Matsuoka
Wataru Sakakibara
Application Number:
JP2017156684A
Publication Date:
November 10, 2021
Filing Date:
August 14, 2017
Export Citation:
Assignee:
DOWA Thermotech Co., Ltd.
International Classes:
C23C16/36; B21D37/01; B21D37/20; B23B27/14; B23F21/00; C23C16/34; C23C16/50
Domestic Patent References:
| JP2002371352A | ||||
| JP2006093550A | ||||
| JP2016204202A |
Foreign References:
| WO2010150411A1 |
Attorney, Agent or Firm:
Koji Hagiwara
Tetsuo Kanamoto
Takashi Saito
Tetsuo Kanamoto
Takashi Saito